Publication detail

High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites

COSKUN, M. POLAT, Ö. YILDIRIM, Y. DURMUS, Z. SEN, C. CAGLAR, Y. CAGLAR, M. TURUT, A.

Original Title

High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites

Type

journal article in Web of Science

Language

English

Original Abstract

LuFe1-xOsxO3 (x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from - 100 degrees C to 100 degrees C by 20 degrees C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe2+ and Fe3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 degrees C.

Keywords

MAGNETIC-PROPERTIES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; RELAXATION; FILMS

Authors

COSKUN, M.; POLAT, Ö.; YILDIRIM, Y.; DURMUS, Z.; SEN, C.; CAGLAR, Y.; CAGLAR, M.; TURUT, A.

Released

1. 3. 2023

Publisher

SPRINGER

Location

DORDRECHT

ISBN

1573-482X

Periodical

Journal of Materials Science: Materials in Electronics

Year of study

34

Number

8

State

Kingdom of the Netherlands

Pages count

14

URL

https://link.springer.com/article/10.1007/s10854-023-10141-2

BibTex

@article{BUT183791,
  author="Mustafa {Coskun} and Özgür {Polat} and Yavuz {Yildirim} and Zerrin Gurel {Durmus} and Chirantan {Sen} and Yasin {Caglar} and Mujdat {Caglar} and Abduelmecit {Turut}",
  title="High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites",
  journal="Journal of Materials Science: Materials in Electronics",
  year="2023",
  volume="34",
  number="8",
  pages="14",
  doi="10.1007/s10854-023-10141-2",
  issn="1573-482X",
  url="https://link.springer.com/article/10.1007/s10854-023-10141-2"
}