Detail publikace

High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites

COSKUN, M. POLAT, Ö. YILDIRIM, Y. DURMUS, Z. SEN, C. CAGLAR, Y. CAGLAR, M. TURUT, A.

Originální název

High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

LuFe1-xOsxO3 (x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from - 100 degrees C to 100 degrees C by 20 degrees C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe2+ and Fe3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 degrees C.

Klíčová slova

MAGNETIC-PROPERTIES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; RELAXATION; FILMS

Autoři

COSKUN, M.; POLAT, Ö.; YILDIRIM, Y.; DURMUS, Z.; SEN, C.; CAGLAR, Y.; CAGLAR, M.; TURUT, A.

Vydáno

1. 3. 2023

Nakladatel

SPRINGER

Místo

DORDRECHT

ISSN

1573-482X

Periodikum

Journal of Materials Science: Materials in Electronics

Ročník

34

Číslo

8

Stát

Nizozemsko

Strany počet

14

URL

BibTex

@article{BUT183791,
  author="Mustafa {Coskun} and Özgür {Polat} and Yavuz {Yildirim} and Zerrin Gurel {Durmus} and Chirantan {Sen} and Yasin {Caglar} and Mujdat {Caglar} and Abduelmecit {Turut}",
  title="High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites",
  journal="Journal of Materials Science: Materials in Electronics",
  year="2023",
  volume="34",
  number="8",
  pages="14",
  doi="10.1007/s10854-023-10141-2",
  issn="1573-482X",
  url="https://link.springer.com/article/10.1007/s10854-023-10141-2"
}