Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
COSKUN, M. POLAT, Ö. YILDIRIM, Y. DURMUS, Z. SEN, C. CAGLAR, Y. CAGLAR, M. TURUT, A.
Originální název
High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
LuFe1-xOsxO3 (x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from - 100 degrees C to 100 degrees C by 20 degrees C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe2+ and Fe3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 degrees C.
Klíčová slova
MAGNETIC-PROPERTIES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; RELAXATION; FILMS
Autoři
COSKUN, M.; POLAT, Ö.; YILDIRIM, Y.; DURMUS, Z.; SEN, C.; CAGLAR, Y.; CAGLAR, M.; TURUT, A.
Vydáno
1. 3. 2023
Nakladatel
SPRINGER
Místo
DORDRECHT
ISSN
1573-482X
Periodikum
Journal of Materials Science: Materials in Electronics
Ročník
34
Číslo
8
Stát
Nizozemsko
Strany počet
14
URL
https://link.springer.com/article/10.1007/s10854-023-10141-2
BibTex
@article{BUT183791, author="Mustafa {Coskun} and Özgür {Polat} and Yavuz {Yildirim} and Zerrin Gurel {Durmus} and Chirantan {Sen} and Yasin {Caglar} and Mujdat {Caglar} and Abduelmecit {Turut}", title="High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites", journal="Journal of Materials Science: Materials in Electronics", year="2023", volume="34", number="8", pages="14", doi="10.1007/s10854-023-10141-2", issn="1573-482X", url="https://link.springer.com/article/10.1007/s10854-023-10141-2" }