Publication detail

Automatic test-bench for SiC power devices using LabVIEW

LEUCHTER, J. PHAM, N. NGUYEN, H.

Original Title

Automatic test-bench for SiC power devices using LabVIEW

Type

journal article in Web of Science

Language

English

Original Abstract

This paper is devoted to the improvement existing models of electronics devices, which are used in powers electronics as switching devices, and investigate a LabVIEW-based automatic test-bench for Silicon carbide (SiC) power devices. In recent years, power electronic devices are required to be capable handle with higher voltage, leads to development of new generation of power electronic devices, such as SiC devices. However, using a simulation platform, such as Spice, to diminish the complexity of power electronic design with these new devices is hindered by the lack of precise models. The proposed test-bench enables not only measuring static characteristics of SiC power devices, but also extracting key parameters required by simulations. These extracted parameters are then employed in the existing device model, and the simulation results which are based on the model with original parameters and models with extracted parameters are compared with measured results. The comparison clearly demonstrates that parameters obtained from the proposed test-bench significantly enhance the Spice model.

Keywords

power electronic devices; SiC; LabVIEW; PSpice; Spice model

Authors

LEUCHTER, J.; PHAM, N.; NGUYEN, H.

Released

1. 4. 2024

Publisher

SLOVAK UNIV TECHNOLOGY

Location

BRATISLAVA

ISBN

1339-309X

Periodical

Journal of Electrical Engineering

Year of study

75

Number

2

State

Slovak Republic

Pages from

77

Pages to

85

Pages count

9

URL

https://sciendo.com/article/10.2478/jee-2024-0011

Full text in the Digital Library

http://hdl.handle.net/11012/245523

BibTex

@article{BUT188486,
  author="Jan {Leuchter} and Ngoc Nam {Pham} and Huy Hoang {Nguyen}",
  title="Automatic test-bench for SiC power devices using LabVIEW",
  journal="Journal of Electrical Engineering",
  year="2024",
  volume="75",
  number="2",
  pages="77--85",
  doi="10.2478/jee-2024-0011",
  issn="1339-309X",
  url="https://sciendo.com/article/10.2478/jee-2024-0011"
}