Publication detail

Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

AL SOUD, A. ABER, A. HOLCMAN, V. SEDLÁK, P. SOBOLA, D.

Original Title

Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

Type

conference paper

Language

English

Original Abstract

Field-effect graphene transistors are finding increasing commercial and research applications. Simulation is an important step in facilitating this transition. It contributes to understanding the work process, identifying potential issues and minimizing the cost of production. In this work, the electrical characteristics of back-gated graphene field-effect transistor were simulated using ANSYS electronics software. The output current was studied by applying a voltage difference between the source and drain ranging from -5 mV to 5 mV. The back-gate applied voltage was -50 to 50 V. The results show that the gate voltage induced a similar change in both the contact and channel resistance but did not change the density of mobility of positive and negative carriers

Keywords

field effect transistors; graphene; mobility

Authors

AL SOUD, A.; ABER, A.; HOLCMAN, V.; SEDLÁK, P.; SOBOLA, D.

Released

1. 12. 2024

Publisher

IEEE

Location

NEW YORK

ISBN

979-8-3503-7977-8

Book

International Vacuum Nanoelectronics Conference

ISBN

2164-2370

Periodical

International Vacuum Nanoelectronics Conference

State

United States of America

Pages count

2

URL

https://ieeexplore.ieee.org/document/10652423

BibTex

@inproceedings{BUT197292,
  author="Ammar {AL Soud} and Vladimír {Holcman} and Dinara {Sobola} and Ahmad M. D. {Jaber} and Petr {Sedlák}",
  title="Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor",
  booktitle="International Vacuum Nanoelectronics Conference",
  year="2024",
  journal="International Vacuum Nanoelectronics Conference",
  pages="2",
  publisher="IEEE",
  address="NEW YORK",
  doi="10.1109/IVNC63480.2024.10652423",
  isbn="979-8-3503-7977-8",
  issn="2164-2370",
  url="https://ieeexplore.ieee.org/document/10652423"
}