Detail publikace

Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

AL SOUD, A. ABER, A. HOLCMAN, V. SEDLÁK, P. SOBOLA, D.

Originální název

Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Field-effect graphene transistors are finding increasing commercial and research applications. Simulation is an important step in facilitating this transition. It contributes to understanding the work process, identifying potential issues and minimizing the cost of production. In this work, the electrical characteristics of back-gated graphene field-effect transistor were simulated using ANSYS electronics software. The output current was studied by applying a voltage difference between the source and drain ranging from -5 mV to 5 mV. The back-gate applied voltage was -50 to 50 V. The results show that the gate voltage induced a similar change in both the contact and channel resistance but did not change the density of mobility of positive and negative carriers

Klíčová slova

field effect transistors; graphene; mobility

Autoři

AL SOUD, A.; ABER, A.; HOLCMAN, V.; SEDLÁK, P.; SOBOLA, D.

Vydáno

1. 12. 2024

Nakladatel

IEEE

Místo

NEW YORK

ISBN

979-8-3503-7977-8

Kniha

International Vacuum Nanoelectronics Conference

ISSN

2164-2370

Periodikum

International Vacuum Nanoelectronics Conference

Stát

Spojené státy americké

Strany počet

2

URL

https://ieeexplore.ieee.org/document/10652423

BibTex

@inproceedings{BUT197292,
  author="Ammar {AL Soud} and Vladimír {Holcman} and Dinara {Sobola} and Ahmad M. D. {Jaber} and Petr {Sedlák}",
  title="Simulation of the Electrical Properties of a Graphene Monolayer Field Effect Transistor",
  booktitle="International Vacuum Nanoelectronics Conference",
  year="2024",
  journal="International Vacuum Nanoelectronics Conference",
  pages="2",
  publisher="IEEE",
  address="NEW YORK",
  doi="10.1109/IVNC63480.2024.10652423",
  isbn="979-8-3503-7977-8",
  issn="2164-2370",
  url="https://ieeexplore.ieee.org/document/10652423"
}