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ČECHALOVÁ, B. MISTRÍK, J. ČECH, V.
Original Title
The annealing effect of the silicon substrates studied by ellipsometry
Type
conference paper
Language
English
Original Abstract
As-received silicon wafers were in situ annealed up to 300 C and then cooled back to the room temperature. The effect of repeated temperature treatment was studied by means of spectroscopic ellipsometry. The ellipsometric data were analyzed in order to describe the situation after the annealing. It was shown that the annealing resulted in the removal of adsorbed impurities from the wafer surface. A detailed view on the surface situation of the substrate is beneficial for subsequent modelling and describing of deposited films.
Keywords
Ellipsometry
Authors
ČECHALOVÁ, B.; MISTRÍK, J.; ČECH, V.
RIV year
2007
Released
13. 12. 2007
Pages from
117
Pages to
120
Pages count
4
BibTex
@inproceedings{BUT28341, author="Božena {Čechalová} and Jan {Mistrík} and Vladimír {Čech}", title="The annealing effect of the silicon substrates studied by ellipsometry", booktitle="Juniormat 07", year="2007", pages="117--120" }