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ČECHALOVÁ, B. MISTRÍK, J. ČECH, V.
Originální název
The annealing effect of the silicon substrates studied by ellipsometry
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
As-received silicon wafers were in situ annealed up to 300 C and then cooled back to the room temperature. The effect of repeated temperature treatment was studied by means of spectroscopic ellipsometry. The ellipsometric data were analyzed in order to describe the situation after the annealing. It was shown that the annealing resulted in the removal of adsorbed impurities from the wafer surface. A detailed view on the surface situation of the substrate is beneficial for subsequent modelling and describing of deposited films.
Klíčová slova
Ellipsometry
Autoři
ČECHALOVÁ, B.; MISTRÍK, J.; ČECH, V.
Rok RIV
2007
Vydáno
13. 12. 2007
Strany od
117
Strany do
120
Strany počet
4
BibTex
@inproceedings{BUT28341, author="Božena {Čechalová} and Jan {Mistrík} and Vladimír {Čech}", title="The annealing effect of the silicon substrates studied by ellipsometry", booktitle="Juniormat 07", year="2007", pages="117--120" }