Přístupnostní navigace
E-application
Search Search Close
Publication detail
MACKŮ, R. KOKTAVÝ, P.
Original Title
On the determination of silicon solar cell properties based on capacitance characteristics measurement
Type
conference paper
Language
English
Original Abstract
Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.
Keywords
Silicon Solar Cell, Barrier Capacitance, Local Defects
Authors
MACKŮ, R.; KOKTAVÝ, P.
RIV year
2010
Released
1. 9. 2010
Publisher
Novpress
Location
Brno
ISBN
978-80-214-4138-5
Book
Electronic Devices and Systems, IMAPS CS International Conference 2010
Edition
1
Pages from
202
Pages to
208
Pages count
7
BibTex
@inproceedings{BUT35153, author="Robert {Macků} and Pavel {Koktavý}", title="On the determination of silicon solar cell properties based on capacitance characteristics measurement", booktitle="Electronic Devices and Systems, IMAPS CS International Conference 2010", year="2010", series="1", pages="202--208", publisher="Novpress", address="Brno", isbn="978-80-214-4138-5" }