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MACKŮ, R. KOKTAVÝ, P.
Originální název
On the determination of silicon solar cell properties based on capacitance characteristics measurement
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.
Klíčová slova
Silicon Solar Cell, Barrier Capacitance, Local Defects
Autoři
MACKŮ, R.; KOKTAVÝ, P.
Rok RIV
2010
Vydáno
1. 9. 2010
Nakladatel
Novpress
Místo
Brno
ISBN
978-80-214-4138-5
Kniha
Electronic Devices and Systems, IMAPS CS International Conference 2010
Edice
1
Strany od
202
Strany do
208
Strany počet
7
BibTex
@inproceedings{BUT35153, author="Robert {Macků} and Pavel {Koktavý}", title="On the determination of silicon solar cell properties based on capacitance characteristics measurement", booktitle="Electronic Devices and Systems, IMAPS CS International Conference 2010", year="2010", series="1", pages="202--208", publisher="Novpress", address="Brno", isbn="978-80-214-4138-5" }