Publication detail

Contribution to modeling of stressing in microelectronic structures

PULEC, J. SZENDIUCH, I.

Original Title

Contribution to modeling of stressing in microelectronic structures

Type

conference paper

Language

English

Original Abstract

Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.

Keywords

ANSYS, Stressing, 3D Structures

Authors

PULEC, J.; SZENDIUCH, I.

RIV year

2010

Released

12. 8. 2010

ISBN

978-1-4244-7849-1

Book

ISSE 2008 Conference Proceedings

Pages from

383

Pages to

385

Pages count

3

BibTex

@inproceedings{BUT35356,
  author="Jiří {Pulec} and Ivan {Szendiuch}",
  title="Contribution to modeling of stressing in microelectronic structures",
  booktitle="ISSE 2008 Conference Proceedings",
  year="2010",
  pages="383--385",
  isbn="978-1-4244-7849-1"
}