Detail publikace

Contribution to modeling of stressing in microelectronic structures

PULEC, J. SZENDIUCH, I.

Originální název

Contribution to modeling of stressing in microelectronic structures

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.

Klíčová slova

ANSYS, Stressing, 3D Structures

Autoři

PULEC, J.; SZENDIUCH, I.

Rok RIV

2010

Vydáno

12. 8. 2010

ISBN

978-1-4244-7849-1

Kniha

ISSE 2008 Conference Proceedings

Strany od

383

Strany do

385

Strany počet

3

BibTex

@inproceedings{BUT35356,
  author="Jiří {Pulec} and Ivan {Szendiuch}",
  title="Contribution to modeling of stressing in microelectronic structures",
  booktitle="ISSE 2008 Conference Proceedings",
  year="2010",
  pages="383--385",
  isbn="978-1-4244-7849-1"
}