Publication detail

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

OHLÍDAL, I. FRANTA, D. PINČÍK, E. OHLÍDAL, M.

Original Title

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

Type

journal article - other

Language

English

Original Abstract

Results concerning optical analysis of the SiO2/Si system performed by combined ellipsometric and reflectometric method used in multiple-sample modification are presented. This method is based on combining both single-wavelength method and the dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with a transition layer and the layer with rough boundaries are used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of other parameters are determined. It is shown that that the simplest model with the smooth boundary is the most convinient with the experimental data.

Keywords

optical constants of Si and SiO2; spectroscopic reflectometry; spectroscopic ellipsometry

Authors

OHLÍDAL, I.; FRANTA, D.; PINČÍK, E.; OHLÍDAL, M.

RIV year

1999

Released

1. 8. 1999

ISBN

0142-2421

Periodical

Surface and Interface Analysis

Year of study

28

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

240

Pages to

244

Pages count

5

BibTex

@article{BUT37558,
  author="Ivan {Ohlídal} and Daniel {Franta} and E. {Pinčík} and Miloslav {Ohlídal}",
  title="Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy",
  journal="Surface and Interface Analysis",
  year="1999",
  volume="28",
  number="1",
  pages="5",
  issn="0142-2421"
}