Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikačního výsledku
OHLÍDAL, I.; FRANTA, D.; PINČÍK, E.; OHLÍDAL, M.
Originální název
Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy
Anglický název
Druh
Článek recenzovaný mimo WoS a Scopus
Originální abstrakt
Results concerning optical analysis of the SiO2/Si system performed by combined ellipsometric and reflectometric method used in multiple-sample modification are presented. This method is based on combining both single-wavelength method and the dispersion method. Three models of the system mentioned, i.e. the model of the substrate and the layer with the smooth boundaries, the same model with a transition layer and the layer with rough boundaries are used to interpret the experimental data. The spectral dependences of the optical constants of silicon and SiO2 with the values of other parameters are determined. It is shown that that the simplest model with the smooth boundary is the most convinient with the experimental data.
Anglický abstrakt
Klíčová slova
optical constants of Si and SiO2; spectroscopic reflectometry; spectroscopic ellipsometry
Klíčová slova v angličtině
Autoři
Vydáno
01.08.1999
ISSN
0142-2421
Periodikum
SURFACE AND INTERFACE ANALYSIS
Svazek
28
Číslo
1
Stát
Spojené království Velké Británie a Severního Irska
Strany od
240
Strany počet
5
BibTex
@article{BUT37558, author="Ivan {Ohlídal} and Daniel {Franta} and E. {Pinčík} and Miloslav {Ohlídal}", title="Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy", journal="SURFACE AND INTERFACE ANALYSIS", year="1999", volume="28", number="1", pages="5", issn="0142-2421" }