Publication detail

Correlated NMOS Statistical Model

RECMAN, M.

Original Title

Correlated NMOS Statistical Model

Type

conference paper

Language

English

Original Abstract

Monte-Carlo analysis of MOS circuits requires the generation of multiple sets of input parameters for the simulator's models. Since the model parameters can be highly correlated, the methods by which these input parameters are determined is critical for accurate results. The paper briefly reviews the principal techniques for the generation of MOSFET correlated model parameters and gives an example of statistical characterization of MOS2 model parameter VFB – flat band voltage which is used as an independent statistical model parameter. The comparison of correlated and uncorrelated models is presented.

Keywords

mos modelling, statistical modelling

Authors

RECMAN, M.

RIV year

2001

Released

1. 1. 2001

Publisher

Vyd. Ing. Zdeněk Novotný, Brno, 2001

Location

Brno

ISBN

80-214-2027-8

Book

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty

Pages from

282

Pages to

289

Pages count

8

BibTex

@inproceedings{BUT3944,
  author="Milan {Recman}",
  title="Correlated NMOS Statistical Model",
  booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty",
  year="2001",
  pages="8",
  publisher="Vyd. Ing. Zdeněk Novotný, Brno, 2001
",
  address="Brno",
  isbn="80-214-2027-8"
}