Detail publikace

Correlated NMOS Statistical Model

RECMAN, M.

Originální název

Correlated NMOS Statistical Model

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Monte-Carlo analysis of MOS circuits requires the generation of multiple sets of input parameters for the simulator's models. Since the model parameters can be highly correlated, the methods by which these input parameters are determined is critical for accurate results. The paper briefly reviews the principal techniques for the generation of MOSFET correlated model parameters and gives an example of statistical characterization of MOS2 model parameter VFB – flat band voltage which is used as an independent statistical model parameter. The comparison of correlated and uncorrelated models is presented.

Klíčová slova

mos modelling, statistical modelling

Autoři

RECMAN, M.

Rok RIV

2001

Vydáno

1. 1. 2001

Nakladatel

Vyd. Ing. Zdeněk Novotný, Brno, 2001

Místo

Brno

ISBN

80-214-2027-8

Kniha

Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty

Strany od

282

Strany do

289

Strany počet

8

BibTex

@inproceedings{BUT3944,
  author="Milan {Recman}",
  title="Correlated NMOS Statistical Model",
  booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty",
  year="2001",
  pages="8",
  publisher="Vyd. Ing. Zdeněk Novotný, Brno, 2001
",
  address="Brno",
  isbn="80-214-2027-8"
}