Publication detail

Local measurement of optically induced photocurrent in semiconductor structures

BENEŠOVÁ, M. DOBIS, P. TOMÁNEK, P. UHDEOVÁ, N.

Original Title

Local measurement of optically induced photocurrent in semiconductor structures

Type

journal article in Web of Science

Language

English

Original Abstract

Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Keywords

locally induced photocurrent, scanning near-field optical microscopy, super-resolution, AlGaAs/GaAs, Fabry-Perot effect

Authors

BENEŠOVÁ, M.; DOBIS, P.; TOMÁNEK, P.; UHDEOVÁ, N.

RIV year

2002

Released

1. 9. 2003

Publisher

SPIE

Location

Bellingham, USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Year of study

5036

Number

5036

State

United States of America

Pages from

635

Pages to

639

Pages count

5

BibTex

@article{BUT40869,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Naděžda {Uhdeová}",
  title="Local measurement of optically induced photocurrent in semiconductor structures",
  journal="Proceedings of SPIE",
  year="2003",
  volume="5036",
  number="5036",
  pages="635--639",
  issn="0277-786X"
}