Detail publikace

Local measurement of optically induced photocurrent in semiconductor structures

BENEŠOVÁ, M. DOBIS, P. TOMÁNEK, P. UHDEOVÁ, N.

Originální název

Local measurement of optically induced photocurrent in semiconductor structures

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Klíčová slova

locally induced photocurrent, scanning near-field optical microscopy, super-resolution, AlGaAs/GaAs, Fabry-Perot effect

Autoři

BENEŠOVÁ, M.; DOBIS, P.; TOMÁNEK, P.; UHDEOVÁ, N.

Rok RIV

2002

Vydáno

1. 9. 2003

Nakladatel

SPIE

Místo

Bellingham, USA

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Ročník

5036

Číslo

5036

Stát

Spojené státy americké

Strany od

635

Strany do

639

Strany počet

5

BibTex

@article{BUT40869,
  author="Markéta {Benešová} and Pavel {Dobis} and Pavel {Tománek} and Naděžda {Uhdeová}",
  title="Local measurement of optically induced photocurrent in semiconductor structures",
  journal="Proceedings of SPIE",
  year="2003",
  volume="5036",
  number="5036",
  pages="635--639",
  issn="0277-786X"
}