Publication detail

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

PAZDERA, L.

Original Title

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

Type

journal article - other

Language

English

Original Abstract

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

Key words in English

model, low-frequency noise , LDD MOSFET´s

Authors

PAZDERA, L.

Released

1. 1. 1997

ISBN

0741-3106

Periodical

Electron device letters

Year of study

1997

Number

5

State

United States of America

Pages from

480

Pages to

482

Pages count

3

BibTex

@article{BUT41385,
  author="Luboš {Pazdera}",
  title="Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s",
  journal="Electron device letters",
  year="1997",
  volume="1997",
  number="5",
  pages="3",
  issn="0741-3106"
}