Publication detail

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

TOMÁNEK, P. BENEŠOVÁ, M. DOBIS, P. OTEVŘELOVÁ, D. GRMELA, L. KAWATA, S.

Original Title

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Type

journal article in Web of Science

Language

English

Original Abstract

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Keywords

near-field optics, semiconductor, carrier dynamics, superresolution

Authors

TOMÁNEK, P.; BENEŠOVÁ, M.; DOBIS, P.; OTEVŘELOVÁ, D.; GRMELA, L.; KAWATA, S.

RIV year

2003

Released

15. 7. 2003

Publisher

V S V CO

Location

Moscow, Russia

ISBN

0204-3467

Periodical

Physics of low-dimensional structures

Year of study

2003

Number

3/4

State

United States of America

Pages from

131

Pages to

137

Pages count

7

BibTex

@article{BUT41400,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution",
  journal="Physics of low-dimensional structures",
  year="2003",
  volume="2003",
  number="3/4",
  pages="131--137",
  issn="0204-3467"
}