Detail publikace

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

TOMÁNEK, P. BENEŠOVÁ, M. DOBIS, P. OTEVŘELOVÁ, D. GRMELA, L. KAWATA, S.

Originální název

Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.

Klíčová slova

near-field optics, semiconductor, carrier dynamics, superresolution

Autoři

TOMÁNEK, P.; BENEŠOVÁ, M.; DOBIS, P.; OTEVŘELOVÁ, D.; GRMELA, L.; KAWATA, S.

Rok RIV

2003

Vydáno

15. 7. 2003

Nakladatel

V S V CO

Místo

Moscow, Russia

ISSN

0204-3467

Periodikum

Physics of low-dimensional structures

Ročník

2003

Číslo

3/4

Stát

Spojené státy americké

Strany od

131

Strany do

137

Strany počet

7

BibTex

@article{BUT41400,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution",
  journal="Physics of low-dimensional structures",
  year="2003",
  volume="2003",
  number="3/4",
  pages="131--137",
  issn="0204-3467"
}