Publication detail

Dependence of Hooge parameter of InAs heterostructure on temperature

ANDO, M., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T.

Original Title

Dependence of Hooge parameter of InAs heterostructure on temperature

Type

journal article - other

Language

English

Original Abstract

Dependence of Hooge parameter of InAs heterostructure on temperature

Key words in English

Hooge parameter

Authors

ANDO, M., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T.

Released

1. 11. 2000

ISBN

0026-2714

Periodical

Microelectronics Reliability

Year of study

40

Number

11

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1921

Pages to

1924

Pages count

4

BibTex

@article{BUT44214,
  author="Munecazu {Tacano} and M. {Ando} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui}",
  title="Dependence of Hooge parameter of InAs heterostructure on temperature",
  journal="Microelectronics Reliability",
  year="2000",
  volume="40",
  number="11",
  pages="4",
  issn="0026-2714"
}