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Publication detail
VOREL, P.
Original Title
Drivers for power transistors MOSFET a IGBT
Type
journal article - other
Language
English
Original Abstract
This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.
Key words in English
transistor MOSFET, transistor IGBT, power electronics, power converters, drivers for power switching transistors, galvanic separation
Authors
RIV year
2004
Released
1. 1. 2004
ISBN
1213-161X
Periodical
ElectronicsLetters.com - http://www.electronicsletters.com
Year of study
Number
1/5
State
Czech Republic
Pages from
1
Pages to
9
Pages count
BibTex
@article{BUT45697, author="Pavel {Vorel}", title="Drivers for power transistors MOSFET a IGBT", journal="ElectronicsLetters.com - http://www.electronicsletters.com", year="2004", volume="2004", number="1/5", pages="9", issn="1213-161X" }