Přístupnostní navigace
E-application
Search Search Close
Publication detail
LYSÁČEK, D. VÁLEK, L. SPOUSTA, J. ŠIKOLA, T. ŠPETÍK, R.
Original Title
Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates
Type
journal article - other
Language
English
Original Abstract
The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycrystalline layer.
Keywords
Chemical vapor deposition; Structural properties; Polycrystalline silicon; Recrystallization; Grain growth
Authors
LYSÁČEK, D.; VÁLEK, L.; SPOUSTA, J.; ŠIKOLA, T.; ŠPETÍK, R.
RIV year
2010
Released
3. 5. 2010
ISBN
0040-6090
Periodical
Thin Solid Films
Year of study
518
Number
14
State
Kingdom of the Netherlands
Pages from
4052
Pages to
4057
Pages count
6
BibTex
@article{BUT49131, author="David {Lysáček} and Lukáš {Válek} and Jiří {Spousta} and Tomáš {Šikola} and R. {Špetík}", title="Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates", journal="Thin Solid Films", year="2010", volume="518", number="14", pages="4052--4057", issn="0040-6090" }