Publication detail

Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

LYSÁČEK, D. VÁLEK, L. SPOUSTA, J. ŠIKOLA, T. ŠPETÍK, R.

Original Title

Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

Type

journal article - other

Language

English

Original Abstract

The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycrystalline layer.

Keywords

Chemical vapor deposition; Structural properties; Polycrystalline silicon; Recrystallization; Grain growth

Authors

LYSÁČEK, D.; VÁLEK, L.; SPOUSTA, J.; ŠIKOLA, T.; ŠPETÍK, R.

RIV year

2010

Released

3. 5. 2010

ISBN

0040-6090

Periodical

Thin Solid Films

Year of study

518

Number

14

State

Kingdom of the Netherlands

Pages from

4052

Pages to

4057

Pages count

6

BibTex

@article{BUT49131,
  author="David {Lysáček} and Lukáš {Válek} and Jiří {Spousta} and Tomáš {Šikola} and R. {Špetík}",
  title="Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates",
  journal="Thin Solid Films",
  year="2010",
  volume="518",
  number="14",
  pages="4052--4057",
  issn="0040-6090"
}