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LYSÁČEK, D. VÁLEK, L. SPOUSTA, J. ŠIKOLA, T. ŠPETÍK, R.
Originální název
Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycrystalline layer.
Klíčová slova
Chemical vapor deposition; Structural properties; Polycrystalline silicon; Recrystallization; Grain growth
Autoři
LYSÁČEK, D.; VÁLEK, L.; SPOUSTA, J.; ŠIKOLA, T.; ŠPETÍK, R.
Rok RIV
2010
Vydáno
3. 5. 2010
ISSN
0040-6090
Periodikum
Thin Solid Films
Ročník
518
Číslo
14
Stát
Nizozemsko
Strany od
4052
Strany do
4057
Strany počet
6
BibTex
@article{BUT49131, author="David {Lysáček} and Lukáš {Válek} and Jiří {Spousta} and Tomáš {Šikola} and R. {Špetík}", title="Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates", journal="Thin Solid Films", year="2010", volume="518", number="14", pages="4052--4057", issn="0040-6090" }