Publication detail

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D., GRMELA, L., TOMÁNEK, P., UHDEOVÁ, N.

Original Title

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Type

conference paper

Language

English

Original Abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Key words in English

Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution

Authors

OTEVŘELOVÁ, D., GRMELA, L., TOMÁNEK, P., UHDEOVÁ, N.

RIV year

2002

Released

26. 5. 2002

Publisher

Techmarket

Location

Praha

ISBN

80-86114-46-5

Book

Photonics Prague 2002

Pages from

148

Pages to

148

Pages count

1

BibTex

@inproceedings{BUT5019,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Naděžda {Uhdeová}",
  title="Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  booktitle="Photonics Prague 2002",
  year="2002",
  pages="1",
  publisher="Techmarket",
  address="Praha",
  isbn="80-86114-46-5"
}