Detail publikace

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

OTEVŘELOVÁ, D., GRMELA, L., TOMÁNEK, P., UHDEOVÁ, N.

Originální název

Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Klíčová slova v angličtině

Local photoluminescence, scanning near-field optical microscopy, quantum well, superresolution

Autoři

OTEVŘELOVÁ, D., GRMELA, L., TOMÁNEK, P., UHDEOVÁ, N.

Rok RIV

2002

Vydáno

26. 5. 2002

Nakladatel

Techmarket

Místo

Praha

ISBN

80-86114-46-5

Kniha

Photonics Prague 2002

Strany od

148

Strany do

148

Strany počet

1

BibTex

@inproceedings{BUT5019,
  author="Dana {Otevřelová} and Lubomír {Grmela} and Pavel {Tománek} and Naděžda {Uhdeová}",
  title="Photoluminiscence scanning near-field optical microscopy in GaAlAs/GaAs quantum wells",
  booktitle="Photonics Prague 2002",
  year="2002",
  pages="1",
  publisher="Techmarket",
  address="Praha",
  isbn="80-86114-46-5"
}