Přístupnostní navigace
E-application
Search Search Close
Publication detail
GRMELA, L. ŠKARVADA, P. MACKŮ, R. TOMÁNEK, P.
Original Title
Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell
Type
journal article - other
Language
English
Original Abstract
Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
Keywords
defect, detection, loclaization, solar cell, near-field
Authors
GRMELA, L.; ŠKARVADA, P.; MACKŮ, R.; TOMÁNEK, P.
RIV year
2011
Released
28. 5. 2011
Publisher
Inventi
Location
Mumbai Indie
ISBN
2229-7774
Periodical
Inventi Rapid: Energy & Power
Year of study
Number
2
State
Republic of India
Pages from
1
Pages to
4
Pages count
BibTex
@article{BUT50601, author="Lubomír {Grmela} and Pavel {Škarvada} and Robert {Macků} and Pavel {Tománek}", title="Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell", journal="Inventi Rapid: Energy & Power", year="2011", volume="2011", number="2", pages="1--4", issn="2229-7774" }