Detail publikace

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

GRMELA, L. ŠKARVADA, P. MACKŮ, R. TOMÁNEK, P.

Originální název

Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Different surface and bulk defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field non-destructive characterization techniques. The results of mapped topography, local surface reflection and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

Klíčová slova

defect, detection, loclaization, solar cell, near-field

Autoři

GRMELA, L.; ŠKARVADA, P.; MACKŮ, R.; TOMÁNEK, P.

Rok RIV

2011

Vydáno

28. 5. 2011

Nakladatel

Inventi

Místo

Mumbai Indie

ISSN

2229-7774

Periodikum

Inventi Rapid: Energy & Power

Ročník

2011

Číslo

2

Stát

Indická republika

Strany od

1

Strany do

4

Strany počet

4

BibTex

@article{BUT50601,
  author="Lubomír {Grmela} and Pavel {Škarvada} and Robert {Macků} and Pavel {Tománek}",
  title="Near-field Detection and Localization of Defects in Monocrystalline Silicon Solar Cell",
  journal="Inventi Rapid: Energy & Power",
  year="2011",
  volume="2011",
  number="2",
  pages="1--4",
  issn="2229-7774"
}