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Publication detail
RECMAN, M.
Original Title
TCAD Tools in Device Characterization and Parameter Extraction
Type
conference paper
Language
English
Original Abstract
Simulation based (process-device) extraction methodology brings advantages both in cost savings and in reducing time-to-market. Instead of enduring the high cost and long time required for silicon fabrication, device designers obtain almost immediately the SPICE model parameters that result from "what if" process change analysis. This provokes a constantly growing need for complete device characterization and parameter extraction on the basis of simulated data provided by process and device simulators. Parameter extractors are those tools that link process-device simulation to circuit simulation and the main goal is to extract device model parameter values from front-end technological parameters. At present the exploitation of the integrated TCAD tools to solve this problem is under study. The approaches to integrate process, device and circuit simulation TCAD tools are reviewed and examples of parameter extractors of leading TCAD vendors are presented.
Key words in English
TCAD, device characterization, parameter extraction,
Authors
RIV year
2002
Released
1. 1. 2002
Publisher
Ing. Z. Novotný, Brno 2002
Location
Brno
ISBN
80-214-2217-3
Book
Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design
Pages from
132
Pages to
137
Pages count
6
BibTex
@inproceedings{BUT5525, author="Milan {Recman}", title="TCAD Tools in Device Characterization and Parameter Extraction", booktitle="Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design", year="2002", pages="6", publisher="Ing. Z. Novotný, Brno 2002", address="Brno", isbn="80-214-2217-3" }