Detail publikace

TCAD Tools in Device Characterization and Parameter Extraction

RECMAN, M.

Originální název

TCAD Tools in Device Characterization and Parameter Extraction

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Simulation based (process-device) extraction methodology brings advantages both in cost savings and in reducing time-to-market. Instead of enduring the high cost and long time required for silicon fabrication, device designers obtain almost immediately the SPICE model parameters that result from "what if" process change analysis. This provokes a constantly growing need for complete device characterization and parameter extraction on the basis of simulated data provided by process and device simulators. Parameter extractors are those tools that link process-device simulation to circuit simulation and the main goal is to extract device model parameter values from front-end technological parameters. At present the exploitation of the integrated TCAD tools to solve this problem is under study. The approaches to integrate process, device and circuit simulation TCAD tools are reviewed and examples of parameter extractors of leading TCAD vendors are presented.

Klíčová slova v angličtině

TCAD, device characterization, parameter extraction,

Autoři

RECMAN, M.

Rok RIV

2002

Vydáno

1. 1. 2002

Nakladatel

Ing. Z. Novotný, Brno 2002

Místo

Brno

ISBN

80-214-2217-3

Kniha

Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design

Strany od

132

Strany do

137

Strany počet

6

BibTex

@inproceedings{BUT5525,
  author="Milan {Recman}",
  title="TCAD Tools in Device Characterization and Parameter Extraction",
  booktitle="Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design",
  year="2002",
  pages="6",
  publisher="Ing. Z. Novotný, Brno 2002",
  address="Brno",
  isbn="80-214-2217-3"
}