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TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.
Original Title
Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states
Type
abstract
Language
English
Original Abstract
Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.
Keywords
InGaAs quantum dots, excited states, photoluminescence, near-field optics
Authors
Released
26. 4. 2004
Publisher
SPIE, Europe
Pages from
178
Pages to
Pages count
1
BibTex
@misc{BUT59947, author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}", title="Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states", booktitle="Photonics Europe", year="2004", pages="1", publisher="SPIE, Europe", note="abstract" }