Publication detail

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Original Title

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

Type

abstract

Language

English

Original Abstract

Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.

Keywords

InGaAs quantum dots, excited states, photoluminescence, near-field optics

Authors

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Released

26. 4. 2004

Publisher

SPIE, Europe

Pages from

178

Pages to

178

Pages count

1

BibTex

@misc{BUT59947,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states",
  booktitle="Photonics Europe",
  year="2004",
  pages="1",
  publisher="SPIE, Europe",
  note="abstract"
}