Detail publikace

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Originální název

Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

Recent advances in miniaturized systems have demonstrated that materials with nanometer scale structures can be successfully designed at the atomic and molecular levels to exhibit unique properties by using many methods including SNOM. The semiconductor quantum dots (QD)sue to their small size provide a fully quantized system with a strong 3-D carrier confinement with discrete, atomic like density of states. This feature makes QD very attractive for diverse optoelectronic devices. The photoluminescence measurements performed by SNOM show the difference of quantum dots in size, shape, indium contain and grown technique.

Klíčová slova

InGaAs quantum dots, excited states, photoluminescence, near-field optics

Autoři

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Vydáno

26. 4. 2004

Nakladatel

SPIE, Europe

Strany od

178

Strany do

178

Strany počet

1

BibTex

@misc{BUT59947,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local photoluminescence measurement of semiconductor InGaAs quantum dot excited states",
  booktitle="Photonics Europe",
  year="2004",
  pages="1",
  publisher="SPIE, Europe",
  note="abstract"
}