Publication detail

Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

TICHOPÁDEK, P. ŠIKOLA, T. NEBOJSA, A. ČECHAL, J.

Original Title

Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

Type

conference paper

Language

English

Original Abstract

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Keywords

Spectroscopic Ellipsometry, Ultrathin Film

Authors

TICHOPÁDEK, P.; ŠIKOLA, T.; NEBOJSA, A.; ČECHAL, J.

RIV year

2002

Released

15. 11. 2001

Publisher

FEI VUT v Brně

Location

Brno

ISBN

80-214-1992-X

Book

Sborník příspěvků konference Nové trendy ve fyzice

Pages from

415

Pages to

419

Pages count

5

BibTex

@{BUT69638
}