Application of Spectroscopic Ellipsometry in Ultrathin Film Analysis

článek ve sborníku ve WoS nebo Scopus

angličtina

In the paper the application of a simple spectroscopic ellipsometer for ex situ and in situ studies on SiO2 films (incl. native oxides on Si) is reported. It is shown that the ellipsometer is a reliable tool for the monitoring of chemical etching of SiO2 films with thicknesses above 10 nm. When the films become thinner, the results obtained under atmospheric conditions are strongly influenced by the contamination and roughness of their surface layers. The concentration profiles of these ultrathin films (< 10 nm) were analysed by AR XPS. Further, the ability of the ellipsometer to monitor the removal of native oxides on an Si (111) surface by thermal flashing under UHV conditions is demonstrated as well.

Spectroscopic Ellipsometry, Ultrathin Film

TICHOPÁDEK, P.; ŠIKOLA, T.; NEBOJSA, A.; ČECHAL, J.

2002

15. 11. 2001

FEI VUT v Brně

Brno

80-214-1992-X

Sborník příspěvků konference Nové trendy ve fyzice

415

419

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