Burst noise in thin amorphous films

conference paper

English

A low frequency noise and charge carriers transport mechanism analysis have been performed on Ta-Ta2O5-MnO2 heterostructures of various thickness to determine the current noise sources. The model of MIS structure can be used to give physical interpretation of VA characteristic both in normal and reverse modes. Correlation between leakage current and noise spectral density was evaluated.

burst noise, Ta2O5 films, self-healing

PAVELKA, J.

2001

1. 1. 2001

ÚFYZ FEI VUT Brno

Brno

80-214-1992-X

Sborník příspěvků konference Nové trendy ve fyzice

105

110

6