Publication detail

Aging of silicon-based dielectric coatings deposited by plasma polymerization

STUDÝNKA, J. ČECH, V.

Original Title

Aging of silicon-based dielectric coatings deposited by plasma polymerization

Type

journal article - other

Language

English

Original Abstract

Silicon-based dielectric coatings were deposited from tetravinylsilane or a mixture of tetravinylsilane with oxygen gas by pulsed plasma. The coatings in the form of a-SiC:H or a-SiOC:H alloy were stored at ambient conditions for 800 h to investigate aging effects. The SiH, SiC, and CHx species in the plasma polymer film were identified as responsible for strong oxidation of the deposited material. The increased oxygen concentration up to 19 at.% in the dielectric coatings resulted in a decrease of the refractive index. Oxygen concentrations 10 at.% resulted in reduction of mechanical properties of dielectric coatings deposited at powers 2.5 W. Suitable deposition conditions were deduced to reduce aging effects.

Keywords

Thin film; PECVD; Aging; FTIR, Ellipsometry

Authors

STUDÝNKA, J.; ČECH, V.

RIV year

2011

Released

31. 12. 2011

ISBN

0040-6090

Periodical

Thin Solid Films

Year of study

519

Number

7

State

Kingdom of the Netherlands

Pages from

2168

Pages to

2171

Pages count

4

BibTex

@article{BUT89391,
  author="Jan {Studýnka} and Vladimír {Čech}",
  title="Aging of silicon-based dielectric coatings deposited by plasma polymerization",
  journal="Thin Solid Films",
  year="2011",
  volume="519",
  number="7",
  pages="2168--2171",
  issn="0040-6090"
}