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KOKTAVÝ, P., KOKTAVÝ, B.
Original Title
Diagnostics of GaAsP Light Emitting Diode PN Junctions
Type
conference paper
Language
English
Original Abstract
Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.
Keywords
Microplasma region, PN junction, Noise
Authors
RIV year
2003
Released
1. 1. 2003
Publisher
CNRL
Location
Brno
Pages from
50
Pages to
Pages count
1
BibTex
@inproceedings{BUT9242, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Diagnostics of GaAsP Light Emitting Diode PN Junctions", booktitle="Advanced Experimental Methods fo Noise Research in Nanoscale Electronic Devices, Abstracts Book", year="2003", pages="1", publisher="CNRL", address="Brno" }