Publication detail

Diagnostics of GaAsP Light Emitting Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Original Title

Diagnostics of GaAsP Light Emitting Diode PN Junctions

Type

conference paper

Language

English

Original Abstract

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

Keywords

Microplasma region, PN junction, Noise

Authors

KOKTAVÝ, P., KOKTAVÝ, B.

RIV year

2003

Released

1. 1. 2003

Publisher

CNRL

Location

Brno

Pages from

50

Pages to

50

Pages count

1

BibTex

@inproceedings{BUT9242,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Diagnostics of GaAsP Light Emitting Diode PN Junctions",
  booktitle="Advanced Experimental Methods fo Noise Research in Nanoscale Electronic Devices, Abstracts Book",
  year="2003",
  pages="1",
  publisher="CNRL",
  address="Brno"
}