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KOKTAVÝ, P., KOKTAVÝ, B.
Originální název
Diagnostics of GaAsP Light Emitting Diode PN Junctions
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.
Klíčová slova
Microplasma region, PN junction, Noise
Autoři
Rok RIV
2003
Vydáno
1. 1. 2003
Nakladatel
CNRL
Místo
Brno
Strany od
50
Strany do
Strany počet
1
BibTex
@inproceedings{BUT9242, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Diagnostics of GaAsP Light Emitting Diode PN Junctions", booktitle="Advanced Experimental Methods fo Noise Research in Nanoscale Electronic Devices, Abstracts Book", year="2003", pages="1", publisher="CNRL", address="Brno" }