Publication detail

Formation and study of SiC and AlN epilayers

DALLAEVA, D. SAFARALIEV, G. BILALOV, B. KARDASHOVA, G. TOMÁNEK, P.

Original Title

Formation and study of SiC and AlN epilayers

Type

conference paper

Language

English

Original Abstract

This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy.

Keywords

sublimation epitaxy, ion-plasma sputtering, structural perfection, morphology

Authors

DALLAEVA, D.; SAFARALIEV, G.; BILALOV, B.; KARDASHOVA, G.; TOMÁNEK, P.

RIV year

2012

Released

28. 6. 2012

Publisher

Vysoke uceni technicke v Brne

Location

LITERA, Tabor 43a, 61200 Brno

ISBN

978-80-214-4539-0

Book

IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.

Pages from

111

Pages to

115

Pages count

5

BibTex

@inproceedings{BUT93004,
  author="Dinara {Sobola} and Gadjimet {Safaraliev} and Bilal {Bilalov} and Gulnara {Kardashova} and Pavel {Tománek}",
  title="Formation and study of SiC and AlN epilayers",
  booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.",
  year="2012",
  pages="111--115",
  publisher="Vysoke uceni technicke v Brne",
  address="LITERA, Tabor 43a, 61200 Brno",
  isbn="978-80-214-4539-0"
}