Detail publikace

Formation and study of SiC and AlN epilayers

DALLAEVA, D. SAFARALIEV, G. BILALOV, B. KARDASHOVA, G. TOMÁNEK, P.

Originální název

Formation and study of SiC and AlN epilayers

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy.

Klíčová slova

sublimation epitaxy, ion-plasma sputtering, structural perfection, morphology

Autoři

DALLAEVA, D.; SAFARALIEV, G.; BILALOV, B.; KARDASHOVA, G.; TOMÁNEK, P.

Rok RIV

2012

Vydáno

28. 6. 2012

Nakladatel

Vysoke uceni technicke v Brne

Místo

LITERA, Tabor 43a, 61200 Brno

ISBN

978-80-214-4539-0

Kniha

IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.

Strany od

111

Strany do

115

Strany počet

5

BibTex

@inproceedings{BUT93004,
  author="Dinara {Sobola} and Gadjimet {Safaraliev} and Bilal {Bilalov} and Gulnara {Kardashova} and Pavel {Tománek}",
  title="Formation and study of SiC and AlN epilayers",
  booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.",
  year="2012",
  pages="111--115",
  publisher="Vysoke uceni technicke v Brne",
  address="LITERA, Tabor 43a, 61200 Brno",
  isbn="978-80-214-4539-0"
}