Publication detail

Transport Properties and Hooge Noise Parameter of N-GaN

TACANO, M., TANUMA, N., PAVELKA, J., TANIZAKI, H., YAGI, S., TOMISAWA, K., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., MUSHA, T.

Original Title

Transport Properties and Hooge Noise Parameter of N-GaN

Type

conference paper

Language

English

Original Abstract

The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.

Key words in English

noise, fluctuations

Authors

TACANO, M., TANUMA, N., PAVELKA, J., TANIZAKI, H., YAGI, S., TOMISAWA, K., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., MUSHA, T.

RIV year

2004

Released

1. 1. 2003

Publisher

CNRL

Location

Prague

ISBN

80-239-1005-1

Book

Noise and Fluctuations

Pages from

117

Pages to

122

Pages count

6

BibTex

@inproceedings{BUT9391,
  author="Munecazu {Tacano} and Nobuhisa {Tanuma} and Jan {Pavelka} and H. {Tanizaki} and Shuichi {Yagi} and K. {Tomisawa} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui} and Toshimitsu {Musha}",
  title="Transport Properties and Hooge Noise Parameter of N-GaN",
  booktitle="Noise and Fluctuations",
  year="2003",
  pages="6",
  publisher="CNRL",
  address="Prague",
  isbn="80-239-1005-1"
}