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TACANO, M., TANUMA, N., PAVELKA, J., TANIZAKI, H., YAGI, S., TOMISAWA, K., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., MUSHA, T.
Originální název
Transport Properties and Hooge Noise Parameter of N-GaN
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.
Klíčová slova v angličtině
noise, fluctuations
Autoři
Rok RIV
2004
Vydáno
1. 1. 2003
Nakladatel
CNRL
Místo
Prague
ISBN
80-239-1005-1
Kniha
Noise and Fluctuations
Strany od
117
Strany do
122
Strany počet
6
BibTex
@inproceedings{BUT9391, author="Munecazu {Tacano} and Nobuhisa {Tanuma} and Jan {Pavelka} and H. {Tanizaki} and Shuichi {Yagi} and K. {Tomisawa} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui} and Toshimitsu {Musha}", title="Transport Properties and Hooge Noise Parameter of N-GaN", booktitle="Noise and Fluctuations", year="2003", pages="6", publisher="CNRL", address="Prague", isbn="80-239-1005-1" }