Detail publikace

Transport Properties and Hooge Noise Parameter of N-GaN

TACANO, M., TANUMA, N., PAVELKA, J., TANIZAKI, H., YAGI, S., TOMISAWA, K., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., MUSHA, T.

Originální název

Transport Properties and Hooge Noise Parameter of N-GaN

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The mobility and the carrier concentration of the epitaxial n-GaN are analyzed numerically as a function of the temperature and the compensation ratio in good agreement with those derived from the experiments. The available sample at present has rather poor mobility compared with those expected from an ideal perfect crystal, and we need to assume a comparatively large amount of the compensation for the numerical analyses. The typical 1/f noise charateristics are observed by making an idela ohmic contact to the devices at the optimum alloying temperature and its period. The Hooge noise parameter is also analyzed numerically on the basis of the 1/f energy partition model and the cross correlational quantum 1/f noise model, and compared with those derived experimetally between 100 and 300 K. The 1/f energy partition model for the intrinsic GaN wafer seems to explain well the experimental results. So far reported experimental data are also summarized as the function of the normalized mobility.

Klíčová slova v angličtině

noise, fluctuations

Autoři

TACANO, M., TANUMA, N., PAVELKA, J., TANIZAKI, H., YAGI, S., TOMISAWA, K., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T., MUSHA, T.

Rok RIV

2004

Vydáno

1. 1. 2003

Nakladatel

CNRL

Místo

Prague

ISBN

80-239-1005-1

Kniha

Noise and Fluctuations

Strany od

117

Strany do

122

Strany počet

6

BibTex

@inproceedings{BUT9391,
  author="Munecazu {Tacano} and Nobuhisa {Tanuma} and Jan {Pavelka} and H. {Tanizaki} and Shuichi {Yagi} and K. {Tomisawa} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui} and Toshimitsu {Musha}",
  title="Transport Properties and Hooge Noise Parameter of N-GaN",
  booktitle="Noise and Fluctuations",
  year="2003",
  pages="6",
  publisher="CNRL",
  address="Prague",
  isbn="80-239-1005-1"
}