Publication detail

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

Original Title

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

Type

conference paper

Language

English

Original Abstract

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Key words in English

noise, fluctuations

Authors

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

RIV year

2004

Released

1. 1. 2003

Publisher

CNRL

Location

Prague

ISBN

80-239-1005-1

Book

Noise and Fluctuations

Pages from

123

Pages to

126

Pages count

4

BibTex

@inproceedings{BUT9392,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model",
  booktitle="Noise and Fluctuations",
  year="2003",
  pages="4",
  publisher="CNRL",
  address="Prague",
  isbn="80-239-1005-1"
}