Přístupnostní navigace
E-application
Search Search Close
Publication detail
PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.
Original Title
Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model
Type
conference paper
Language
English
Original Abstract
Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
Key words in English
noise, fluctuations
Authors
RIV year
2004
Released
1. 1. 2003
Publisher
CNRL
Location
Prague
ISBN
80-239-1005-1
Book
Noise and Fluctuations
Pages from
123
Pages to
126
Pages count
4
BibTex
@inproceedings{BUT9392, author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}", title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model", booktitle="Noise and Fluctuations", year="2003", pages="4", publisher="CNRL", address="Prague", isbn="80-239-1005-1" }