Detail publikačního výsledku

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

Originální název

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

Anglický název

Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Anglický abstrakt

Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.

Klíčová slova v angličtině

noise, fluctuations

Autoři

PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.

Vydáno

01.01.2003

Nakladatel

CNRL

Místo

Prague

ISBN

80-239-1005-1

Kniha

Noise and Fluctuations

Strany od

123

Strany počet

4

BibTex

@inproceedings{BUT9392,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}",
  title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model",
  booktitle="Noise and Fluctuations",
  year="2003",
  pages="4",
  publisher="CNRL",
  address="Prague",
  isbn="80-239-1005-1"
}