Publication detail

Failure model of MOS transistors

PASZ, R., MUSIL, V.

Original Title

Failure model of MOS transistors

Type

conference paper

Language

English

Original Abstract

Effects of gate-oxide failures on the operation of MOS transistor and describes the models of gate-oxide shorts (GOS) in n-channel and p-channel MOS transistors and simulation of circuits with these models.

Keywords

Diagnostics, failure models, MOS transistors.

Authors

PASZ, R., MUSIL, V.

RIV year

2003

Released

1. 9. 2003

Publisher

Nakl. Ing. Z. Novotný

Location

Brno

ISBN

80-214-2452-4

Book

Proceedings of EDS 2003 Electronic Devices and Systems Conference

Edition number

první

Pages from

234

Pages to

238

Pages count

5

BibTex

@inproceedings{BUT9589,
  author="Robert {Pasz} and Vladislav {Musil}",
  title="Failure model of MOS transistors",
  booktitle="Proceedings of EDS 2003 Electronic Devices and Systems Conference",
  year="2003",
  number="první",
  pages="5",
  publisher="Nakl. Ing. Z. Novotný",
  address="Brno",
  isbn="80-214-2452-4"
}