Publication detail

Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces

BÁBÍK, A. MISTRÍK, J. ZEMEK, J. ČECH, V.

Original Title

Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces

Type

journal article - other

Language

English

Original Abstract

This study was aimed at deposition of self-assembled monolayers (SAMs) using vinyltriethoxysilane (VTES) and vinyltrichlorosilane (VTCS) molecules chemisorbed on silicon dioxide surfaces. The kinetics of SAM formation on planar glass substrates and silicon wafers was characterized by contact angle measurements. The surface free energy and its dispersion and polar components enabled to estimate the time of immersion required to deposit compact SAMs. Adsorption of organosilane molecules as a function of immersion time was characterized by X-ray photoelectron spectroscopy. The SAM thickness was evaluated by spectroscopic ellipsometry. Surface topography of deposited layers was investigated by atomic force microscopy (AFM). The VTCS/glass combination exhibited the fastest kinetics but the deposit was not uniform and included local agglomerates. The hydrophobic vinyl groups at deposit surface resulted in a surface free energy of 32 mJ m-2.

Keywords

Self-assembled monolayers, organosilanes, contact angle, surface free energy, ellipsometry, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS)

Authors

BÁBÍK, A.; MISTRÍK, J.; ZEMEK, J.; ČECH, V.

RIV year

2012

Released

17. 12. 2012

ISBN

0169-4243

Periodical

Journal of Adhesion Science and Technology

Year of study

26

Number

22

State

Kingdom of the Netherlands

Pages from

2543

Pages to

2554

Pages count

12

BibTex

@article{BUT97132,
  author="Adam {Bábík} and Jan {Mistrík} and Josef {Zemek} and Vladimír {Čech}",
  title="Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces",
  journal="Journal of Adhesion Science and Technology",
  year="2012",
  volume="26",
  number="22",
  pages="2543--2554",
  issn="0169-4243"
}