Detail publikace

Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces

BÁBÍK, A. MISTRÍK, J. ZEMEK, J. ČECH, V.

Originální název

Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

This study was aimed at deposition of self-assembled monolayers (SAMs) using vinyltriethoxysilane (VTES) and vinyltrichlorosilane (VTCS) molecules chemisorbed on silicon dioxide surfaces. The kinetics of SAM formation on planar glass substrates and silicon wafers was characterized by contact angle measurements. The surface free energy and its dispersion and polar components enabled to estimate the time of immersion required to deposit compact SAMs. Adsorption of organosilane molecules as a function of immersion time was characterized by X-ray photoelectron spectroscopy. The SAM thickness was evaluated by spectroscopic ellipsometry. Surface topography of deposited layers was investigated by atomic force microscopy (AFM). The VTCS/glass combination exhibited the fastest kinetics but the deposit was not uniform and included local agglomerates. The hydrophobic vinyl groups at deposit surface resulted in a surface free energy of 32 mJ m-2.

Klíčová slova

Self-assembled monolayers, organosilanes, contact angle, surface free energy, ellipsometry, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS)

Autoři

BÁBÍK, A.; MISTRÍK, J.; ZEMEK, J.; ČECH, V.

Rok RIV

2012

Vydáno

17. 12. 2012

ISSN

0169-4243

Periodikum

Journal of Adhesion Science and Technology

Ročník

26

Číslo

22

Stát

Nizozemsko

Strany od

2543

Strany do

2554

Strany počet

12

BibTex

@article{BUT97132,
  author="Adam {Bábík} and Jan {Mistrík} and Josef {Zemek} and Vladimír {Čech}",
  title="Self-assembled monolayers of vinyltriethoxysilane and vinyltrichlorosilane deposited on silicon dioxide surfaces",
  journal="Journal of Adhesion Science and Technology",
  year="2012",
  volume="26",
  number="22",
  pages="2543--2554",
  issn="0169-4243"
}