Thin Films of Tetravinylsilane Characterized by Spectroscopic Ellipsometry

abstract

English

We prepared thin films from vapor of tetravinylsilane (TVS) monomer using plasma-enhanced chemical vapor deposition (PECVD) with a process gas pressure of 2.7 Pa at a monomer flow rate of 3.8 sccm. Thin films were deposited at different powers using continuous wave (10-70 W) and pulsed (2-150 W) plasmas (13.56 MHz). In situ phase-modulated spectroscopic ellipsometer (UVISEL, Jobin-Yvon) operated in range 250-830 nm was used to determine the film thickness and optical properties like refractive index and extinction coefficient in a form of dispersion curves. For a selected wavelength of 633 nm, the refractive index increased from 1.7 to 2.3 and the extinction coefficient was ranging from 0 to 0.15 with enhanced power. The dielectric function of films evaluated by spectroscopic ellipsometry was fitted by Tauc-Lorentz formula to determine the band gap, which decreased from 2.7 eV (2 W) to 0.7 eV (150 W) with enhanced power. The optical properties of films dependent on the power were similar for continuous wave and pulsed plasmas. The deposition rate for continuous wave and pulsed plasmas varied from 82 to 262 nm/min as a function of power.

PECVD, Spectroscopic Ellipsometry, Refractive Index, Extinction Coefficient, Band gap

BRÁNECKÝ, M.; ČECH, V.

23. 3. 2017

Vysoké učení technické v Brně, Fakulta Chemická

Purkyňova 464/118, 61200 Brno

978-80-214-5488-0

Sborník abstraktů. Studentská konference CHEMIE JE ŽIVOT

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