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Publication detail
Ondrej Hegr, Jaroslav Bousek
Original Title
SiNx and SiO2 as passivation layers for high grade solar cells.
Type
conference paper
Language
English
Original Abstract
In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.
Keywords
surface passivation, solar cell, deposition of SiN and SiO2, recombination
Authors
RIV year
2005
Released
23. 9. 2005
Publisher
nakl. Z. Novotný
Location
Brno
ISBN
80-214-3042-7
Book
Socrates workshop 2005
Edition number
1
Pages from
186
Pages to
191
Pages count
6
BibTex
@inproceedings{BUT16445, author="Ondřej {Hégr} and Jaroslav {Boušek}", title="SiNx and SiO2 as passivation layers for high grade solar cells.", booktitle="Socrates workshop 2005", year="2005", number="1", pages="6", publisher="nakl. Z. Novotný", address="Brno", isbn="80-214-3042-7" }