Publication detail

Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry

ČECH, V. BRÁNECKÝ, M.

Original Title

Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry

Type

journal article in Web of Science

Language

English

Original Abstract

The power dependence of the plasma species in nonthermal tetravinylsilane plasmas used for thin-film deposition is investigated by mass spectrometry. Mass spectra analysis reveals the dominant carbon and silicon-containing species responsible for film growth. The deposition rate determined by in situ spectroscopic ellipsometry correlates with the flux of these species chemisorbed on the film surface if distinct sticking coefficients are taken into account. Then, the carbon to silicon ratio in the deposited film strongly correlates with the C/Si flux ratio for the various power-controlled plasmas. Similarly, the concentration of vinyl groups incorporated into the deposited film and the proportion of sp2 hybridization of the carbon network correlate with the fluxes of the respective plasma species.

Keywords

mass spectrometry; non-thermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PECVD); thin films

Authors

ČECH, V.; BRÁNECKÝ, M.

Released

28. 12. 2021

Publisher

Wiley

ISBN

1612-8869

Periodical

Plasma Processes and Polymers

Number

e2100192

State

Federal Republic of Germany

Pages from

1

Pages to

13

Pages count

13

URL

https://onlinelibrary.wiley.com/doi/10.1002/ppap.202100192

BibTex

@article{BUT175877,
  author="Vladimír {Čech} and Martin {Bránecký}",
  title="Nonthermal tetravinylsilane plasma used for thin-film deposition: Plasma chemistry controls thin-film chemistry",
  journal="Plasma Processes and Polymers",
  year="2021",
  number="e2100192",
  pages="1--13",
  doi="10.1002/ppap.202100192",
  issn="1612-8869",
  url="https://onlinelibrary.wiley.com/doi/10.1002/ppap.202100192"
}